Enhancement of Critical Current Density in Ion irradiated Ba(Fe,Co)2 As2 Thin Film

The effect of 600 keV He+ ion irradiation on the temperature and magnetic field dependence of the critical current density JC of high quality BaFe1.84Co0.16As2 (Co-doped Ba122 type) thin films is investigated. The films are prepared by pulsed-laser-deposition on CaF2 substrates. The irradiation dosage is varied between 1x1013 to 1x1016 ions/cm2 at room temperature. Upon irradiation, the critical temperature TC drops slightly from 25 K for the un-irradiated sample to about 20 K for the sample with the highest irradiation level. The maximum JC value at 4.5 K temperature is enhanced up to 2.4 MA cm−2 under 1 T field. The analysis of pinning force dependence on magnetic field shows that the pinning behavior is not changed in the irradiated samples suggesting more pinning centers of similar nature to those of presented in the un-irradiated samples are introduced by the irradiation process. The results indicate that the irradiation of light element ions He+ with relatively low energy could increase the critical current density in iron based superconductors. A pdf version of the poster can be seen here.


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