Generation of ion implanted reference wafers for Nanoelectrical AFM Characterisation
This presentation gives an overview of the work to develop a set of reference standards for electrical AFM measurements. AFM is a common tool used for device forensics and electrical characterisation techniques such as scanning spreading resistance microscopy (SSRM) allows dopant profiling of semiconductor devices and material structures. Developing a suitable reference standard will allow:
- An examination into sample preparation techniques for targeted AFM device analysis
- Provide not only qualitative but quantitative nanoelectrical AFM data for silicon and III-V material systems
Thanks for watching and if you have any questions, please leave a comment.
Collaborators: Peter Ward and Alan Blake (Tyndall National Institute)
If you would like to leave a comment then please login and/or register. If you are logged in and seeing this message it is because we have not received the acknowledgement of your email address yet.