Hydrogen dynamics in Silicon Oxide (SiOx) Resistive Switching Devices

Resistance switching devices offer a promising route to neuromorphic computing systems. However, recent findings have shown that the ambient humidity levels significantly effect their performance. This supports results of Density Functional Theory (DFT) calculations to model device behaviours that suggest hydrogen plays an important role in switching. Because of the difficulty in directly measuring hydrogen dynamics in such systems they have largely been ignored to date. Here we discus preliminary findings on hydrogen diffusion from Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS) and future plans to use Nuclear Reaction Analysis (NRA) and Elastic Recoil Detection (ERD) to obtain quantitative measures of the hydrogen concentration throughout the switching process.


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