Rutherford backscattering spectrometry investigation of InGaAsBi heterostructures

This short presentation gives an overview of the research on bismuth alloyed III-V semiconductor materials that has been carried out at the Surrey Ion Beam Centre using Rutherford Backscattering Spectrometry (RBS).

RBS was used in conjunction with optical techniques to better understand this relatively new material and aid in helping with the growth problems being encountered. 

I hope you enjoy the presentation and thank you for watching. 


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