Using scanning near-field optical microscopy to locate and identify dopants in silicon

The aim of this project is to locate and identify dopants in silicon, with an ultimate aim of being able to identify a single dopant, using a technique called Scanning Near-field Optical Microscopy (SNOM). SNOM can be used to map the dielectric properties of a sample surface at resolutions much higher than the wavelength of light used. We hope to detect the change in the dielectric function of a small (~10nm2) area of silicon when a dopant transitions from ground state to a higher state. In order to achieve this, a single sample with small implanted areas (~500nm2) of varying dopant density is required and we hope to manufacture such samples using the University of Surrey’s Ion Beam Centre’s single ion implantation tool, SIMPLE.


If you would like to leave a comment then please login and/or register. If you are logged in and seeing this message it is because we have not received the acknowledgement of your email address yet.